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MRFE6VP5300N Chip Transistor Power Tube for 350W 500W Transmitter

R: V20210812-15-02 Data sheet   User Manual

Price(USD) Qty(PCS) Shipping(USD) Total(USD) Shipping Method Payment
135 1 0 135 EMS,DHL,FEDEX,Post air Mail
99 10 0 990 EMS,DHL,FEDEX,Post air Mail

 

 

MRFE6VP5300N Chip Transistor Power Tube for 350W 500W Transmitter


Specification:

Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large--signal, common--source amplifier applications in 50 volt analog or digital television transmitter equipment.

Typical DVB--T OFDM Performance:
VDD = 50 Volts, IDQ = 1400 mA,
Pout = 90 Watts Avg., f = 860 MHz, 8K Mode, 64 QAM
Power Gain:22.5 dB
Drain Efficiency:28%
ACPR @ 4 MHz Offset —— 62 dBc @ 4 kHz Bandwidth
Typical Broadband Two--Tone Performance:
VDD = 50 Volts, IDQ = 1400 mA,
Pout = 450 Watts PEP, f = 470-860 MHz
Power Gain:22 dB
Drain Efficiency:44%
IM3:-29 dBc
Capable of Handling 10:1 VSWR, All Phase Angles, @ 50 Vdc, 860 MHz:450 Watts CW
90 Watts Avg. (DVB--T OFDM Signal, 10 dB PAR, 7.61 MHz Channel Bandwidth)

Features:
*Characterized with Series Equivalent Large--Signal Impedance Parameters
*Internally Input Matched for Ease of Use
*Qualified Up to a Maximum of 50 VDD Operation
* Integrated ESD Protection
* Designed for Push--Pull Operation
* Greater Negative Gate--Source Voltage Range for Improved Class C Operation
*RoHS Compliant
*In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
R5 Suffix = 50 Units per 56 mm, 13 inch Reel.


Package includes:
1 * MRF6VP3450H Transistor




Price(USD) Qty(PCS) Shipping(USD) Total(USD) Shipping Method Payment
135 1 0 135 EMS,DHL,FEDEX,Post air Mail
99 10 0 990 EMS,DHL,FEDEX,Post air Mail

 

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