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MRF6VP41KH 1000 Watt Mosfet

Published:2019/9/2 15:54:58 Visits:

MRF6VP41KH 1000 Watt Mosfet

MRF6VP41KH 1000 Watt Mosfet

Lebih Lengkap Mengenai MRF6VP41KH 1000 Watt Mosfet

RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed primarily for pulsed wideband applications with frequencies up to
500 MHz. 
Devices are unmatched and are suitable for use in industrial,
medical and scientific applications.
• Typical Pulsed Performance at 450 MHz: VDD = 50 Volts, 
IDQ = 150 mA,
Pout = 1000 Watts Peak (200 W Avg.), Pulse Width = 100 μsec,
Duty Cycle = 20%
Power Gain — 20 dB
Drain Efficiency — 64%
• Capable of Handling 10:1 VSWR, @ 50 Vdc, 450 MHz, 1000 Watts Peak
Power

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