Lebih Lengkap Mengenai BLF-245 NXP BLF245

FEATURES
- High power gain
- Low noise figure
- Easy power control
- Good thermal stability
- Withstands full load mismatch.
DESCRIPTION
Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range.
The transistor is encapsulated in a 4-lead SOT123 flange envelope, wit a ceramic cap. All leads are isolated from the flange.
Matched gate-source voltage (VGS) groups are available on request.